Nexperia BSS84AKW Type P-Channel MOSFET, 150 mA, 50 V Enhancement, 3-Pin SC-70
- RS Stock No.:
- 792-0910P
- Mfr. Part No.:
- BSS84AKW,115
- Manufacturer:
- Nexperia
Bulk discount available
View bulk pricing optionsSubtotal 300 units (supplied on a reel)*
€53.10
(exc. VAT)
€65.40
(inc. VAT)
In Stock
- 800 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 25 November 2026
- Plus 3,000 unit(s) shipping from 06 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 300 - 500 | €0.177 |
| 600 + | €0.147 |
*price indicative
- RS Stock No.:
- 792-0910P
- Mfr. Part No.:
- BSS84AKW,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS84AKW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 310mW | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS84AKW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 310mW | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1mm | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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