Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Units	Per unit
1 - 9	€8.58
10 +	€7.40

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	44 A
	Maximum Drain Source Voltage	500 V
	Package Type	TO-247
	Series	UniFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	120 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	750 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	15.87mm
	Maximum Operating Temperature	+175 °C
	Width	4.82mm
	Typical Gate Charge @ Vgs	90 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	20.82mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 44 A
	Maximum Drain Source Voltage 500 V
	Package Type TO-247
	Series UniFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 120 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 750 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 15.87mm
	Maximum Operating Temperature +175 °C
	Width 4.82mm
	Typical Gate Charge @ Vgs 90 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 20.82mm

onsemi UniFET N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 FDH44N50

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

Related links