Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- RS Stock No.:
- 178-7507
- Distrelec Article No.:
- 304-24-004
- Mfr. Part No.:
- BSS138NH6433XTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 10000 units)*
€340.00
(exc. VAT)
€420.00
(inc. VAT)
In Stock
- 250,000 unit(s) ready to ship from another location
- Plus 170,000 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 - 10000 | €0.034 | €340.00 |
| 20000 - 20000 | €0.033 | €330.00 |
| 30000 + | €0.032 | €320.00 |
*price indicative
- RS Stock No.:
- 178-7507
- Distrelec Article No.:
- 304-24-004
- Mfr. Part No.:
- BSS138NH6433XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.83V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.83V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Small Signal MOSFET 60 V in SOT23 package
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Summary of Features
•Enhancement mode
•Logic level
•Avalanche rated
•Fast switching
•Dv/dt rated
•Pb-free lead-plating
•RoHS compliant, halogen-free
•Qualified according to automotive standards
•PPAP capable
Benefits
•Low RDS(on) provides higher efficiency and extends battery life
•Small packages save PCB space
•Best-in-class quality and reliability
Potential Applications
•Automotive
•Lighting
•Battery management
•Load switch
•DC-DC
•eMobility
•Motor control
•Onboard charger
•Telecom
Related links
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- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 BSS138IXTSA1