Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2

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Subtotal (1 pack of 200 units)*

€5.40

(exc. VAT)

€6.60

(inc. VAT)

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Per Pack*
200 - 200€0.027€5.40
400 - 800€0.026€5.20
1000 - 1800€0.025€5.00
2000 - 4800€0.023€4.60
5000 +€0.022€4.40

*price indicative

Packaging Options:
RS Stock No.:
214-4476
Mfr. Part No.:
SN7002NH6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.36W

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Gate Source Voltage Vgs

60 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, AEC Q101

Automotive Standard

No

Distrelec Product Id

304-39-427

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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