Infineon SIPMOS® N-Channel MOSFET, 280 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

RS Stock No.:: 826-9434
Mfr. Part No.:: BSP129H6906XTSA1
Manufacturer:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 280 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

Stock information currently inaccessible

RS Stock No.:: 826-9434
Mfr. Part No.:: BSP129H6906XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	280 mA
	Maximum Drain Source Voltage	240 V
	Series	SIPMOS®
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	6 Ω
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	3.5mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	3.8 nC @ 5 V
	Length	6.5mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Automotive Standard	AEC-Q101
	Height	1.6mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 280 mA
	Maximum Drain Source Voltage 240 V
	Series SIPMOS®
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 6 Ω
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 3.5mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 3.8 nC @ 5 V
	Length 6.5mm
	Number of Elements per Chip 1
	Transistor Material Si
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Automotive Standard AEC-Q101
	Height 1.6mm

Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 350mA Maximum Continuous Drain Current - BSP129H6327XTSA1

This MOSFET is a high-voltage N-channel device designed for surface-mount power switching in demanding electronic systems. It operates across an extended ambient range and is suited to applications that require controlled conduction at elevated voltages while remaining compatible with SOT-223 mounting and automotive-grade expectations.

Features and Benefits:

• 240V drain rating enables high-voltage switching applications
• 350mA continuous drain current supports low-power loads
• 20Ω maximum Rds provides predictable on-state behaviour
• 3.8nC typical gate charge facilitates efficient switching
• 1.8W power dissipation allows moderate thermal loading
• 1.2V forward voltage ensures low voltage drop in conduction

Applications

• Used for high-voltage signal switching in automotive subsystems
• Suitable for low-current power rails and control circuitry
• Ideal for board-level power conditioning modules
• Used with thermal management on compact surface assemblies
• Can be used for battery-management peripheral functions

What gate drive constraints should I consider for switching?

The device accepts up to 20V between gate and source

design gate drivers to respect this limit and to provide adequate slew for the 3.8nC gate charge to balance switching speed and EMI.

How does temperature affect its electrical limits?

The component is specified to operate from -55°C to 150°C

designers must account for derating of power dissipation and junction-to-ambient thermal resistance when operating near the upper temperature bound.

What mounting considerations apply for thermal control?

The SOT-223 package is surface-mounted and benefits from PCB copper area for heat spreading

use a thermal pad or additional copper to maintain junction temperature under the 1.8W dissipation.

Are there specific pin-count constraints for layout?

The device presents four pins

ensure correct pad pattern and trace widths to handle the continuous drain current and to minimise parasitic resistance.