Infineon CoolMOS C3 Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 911-4849
- Mfr. Part No.:
- SPW47N60C3FKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
€190.80
(exc. VAT)
€234.60
(inc. VAT)
Temporarily out of stock
- 300 unit(s) shipping from 25 March 2026
- Plus 240 unit(s) shipping from 27 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | €6.36 | €190.80 |
| 60 - 60 | €6.042 | €181.26 |
| 90 + | €5.791 | €173.73 |
*price indicative
- RS Stock No.:
- 911-4849
- Mfr. Part No.:
- SPW47N60C3FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C3 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 415W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 252nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Length | 15.9mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C3 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 415W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 252nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Length 15.9mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon CoolMOS™ C3 Series MOSFET, 47A Maximum Continuous Drain Current, 415W Maximum Power Dissipation - SPW47N60C3FKSA1
This high-voltage MOSFET is designed for power electronics applications. With its N-channel configuration, it offers consistent performance in various settings. Capable of handling a continuous drain current of 47A, it serves multiple industrial and automation purposes, ensuring reliability and effectiveness in switching tasks.
Features & Benefits
• High performance with a maximum voltage rating of 650V
• Low maximum drain-source resistance of 70mΩ enhances energy efficiency
• Robust power dissipation capability of 415W supports intensive applications
• Channels configured for enhancement mode allow for improved control
• Designed for through-hole mounting for straightforward integration
Applications
• Suitable for energy conversion in renewable energy
• Employed in motor drive circuits for enhanced efficiency
• Used in power management systems for increased stability
What is the optimal temperature range for operating this device?
The device operates efficiently between -55°C and +150°C, enhancing its reliability across varied environments.
How can it integrate into existing electrical systems?
This MOSFET is designed for through-hole mounting, making it compatible with standard PCB layouts for easy integration.
What are the safety considerations when using this component?
It is crucial to ensure the gate-source voltage remains within -20V to +20V to prevent damage during operation and maintain system stability.