N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-247 Infineon SPW20N60C3FKSA1

RS Stock No.:: 911-4830
Mfr. Part No.:: SPW20N60C3FKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-247 Infineon SPW20N60C3FKSA1

Bulk discount available

Subtotal (1 tube of 30 units)**

€142.32

(exc. VAT)

€175.05

(inc. VAT)

60 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Real time stock check

Units	Per unit	Per Tube**
30 - 30	€4.744	€142.32
60 - 120	€4.507	€135.21
150 +	€4.318	€129.54

**price indicative

RS Stock No.:: 911-4830
Mfr. Part No.:: SPW20N60C3FKSA1
Manufacturer:: Infineon

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1

This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits

• N-channel configuration enhances conduction capabilities
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures

Applications

• Power supply regulation and management in industrial systems
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?

It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?

A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?

Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?

This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

What safety precautions should be taken during installation?

Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20.7 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247
Series	CoolMOS™ C3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	208 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	87 nC @ 10 V
Length	15.9mm
Maximum Operating Temperature	+150 °C
Width	5.3mm
Transistor Material	Si
Height	20.95mm
Minimum Operating Temperature	-55 °C