N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB Infineon IRF1405PBF

RS Stock No.:: 913-3831
Mfr. Part No.:: IRF1405PBF
Manufacturer:: Infineon

N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB Infineon IRF1405PBF

Subtotal (1 tube of 50 units)**

€31.05

(exc. VAT)

€38.20

(inc. VAT)

450 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 +	€0.621	€31.05

**price indicative

RS Stock No.:: 913-3831
Mfr. Part No.:: IRF1405PBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF

This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.

Features & Benefits

• Maximum continuous drain current of 169A enhances durability
• Rated for 55V, ensuring operation under high voltage conditions
• Low on-resistance of 5mΩ minimises power loss during operation
• Fast switching capability increases system efficiency
• Features enhancement mode for optimal operation

Applications

• Used in industrial motor drives for efficient control
• Suitable for high-current in power supplies
• Ideal for automation equipment driving motors
• Effective in converters and inverters for renewable energy systems

What is the maximum gate-to-source voltage limit?

The maximum gate-to-source voltage is ±20V, ensuring safe operation.

How does this device handle thermal management?

It operates effectively up to 175°C, providing reliability in high-temperature conditions.

What factors should be considered during installation?

Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.

Can it be used in switching applications?

Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.

What gate charge values can be expected during operation?

The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	169 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	330 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 169 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 330 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 8.77mm