Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF | RS

Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF

RS Stock No.:: 919-4867
Mfr. Part No.:: IRF9Z34NPBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-220AB IRF9Z34NPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

€23.65

(exc. VAT)

€29.10

(inc. VAT)

Temporarily out of stock - back order for despatch 04-08-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 - 50	€0.473	€23.65
100 - 200	€0.35	€17.50
250 - 450	€0.327	€16.35
500 - 1200	€0.303	€15.15
1250 +	€0.284	€14.20

**price indicative

RS Stock No.:: 919-4867
Mfr. Part No.:: IRF9Z34NPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 19A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRF9Z34NPBF

This P-channel MOSFET is designed for consistent performance across various electronic applications. With a continuous drain current rating of 19A and a drain-source voltage of 55V, it is suitable for automation and power management in modern electronic systems. Its robust thermal characteristics enable operation in challenging environments.

Features & Benefits

• High current capacity meets significant load requirements
• Maximum power dissipation of 68W improves durability
• Enhancement mode design supports efficient switching performance
• Low gate charge allows for quicker operation
• Effective thermal characteristics ensure stable performance at elevated temperatures
• TO-220AB package offers convenient integration into circuits

Applications

• Suitable for power supply circuits prioritising efficiency
• Perfect for motor control in automation systems
• Appropriate for high-frequency switching scenarios
• Employed in power management systems to enhance performance

What is the maximum temperature for this MOSFET?

It can operate at a maximum temperature of +175 °C while maintaining efficiency and reliability.

How does it handle gate-source voltage variations?

It accommodates a maximum gate-source voltage of ±20V, providing flexibility in circuit design.

What is the significance of its low drain-source resistance?

A maximum drain-source resistance of 100 mΩ increases power efficiency and reduces heat production.

Can it be used in high-frequency applications?

Yes, it supports fast switching due to its low gate charge of 35 nC at 10V.

How is the thermal performance managed in practical applications?

The high power dissipation capacity of 68W aids in effective heat management during operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	19 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	100 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	68 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.54mm
	Typical Gate Charge @ Vgs	35 nC @ 10 V
	Transistor Material	Si
	Width	4.69mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.6V
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 19 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 100 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 68 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.54mm
	Typical Gate Charge @ Vgs 35 nC @ 10 V
	Transistor Material Si
	Width 4.69mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.6V
	Height 8.77mm