Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF | RS

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF

RS Stock No.:: 919-4924
Mfr. Part No.:: IRF5305PBF
Manufacturer:: Infineon

Infineon HEXFET P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB IRF5305PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

€40.50

(exc. VAT)

€50.00

(inc. VAT)

750 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Real time stock check

Units	Per unit	Per Tube**
50 - 50	€0.81	€40.50
100 - 200	€0.632	€31.60
250 - 450	€0.591	€29.55
500 - 1200	€0.551	€27.55
1250 +	€0.51	€25.50

**price indicative

RS Stock No.:: 919-4924
Mfr. Part No.:: IRF5305PBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF

This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.

Features & Benefits

• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency

Applications

• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems

What is the temperature range for operation?

It operates within -55°C to +175°C, making it apt for extreme conditions.

How does the package type affect performance?

The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.

Can it handle pulsed drain current applications?

Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.

What type of transistor is this?

It is a P-channel Si MOSFET, optimised for high-efficiency applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Length	10.54mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	63 nC @ 10 V
	Width	4.69mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	8.77mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Length 10.54mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 63 nC @ 10 V
	Width 4.69mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 8.77mm