Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247
- RS Stock No.:
- 222-4830
- Mfr. Part No.:
- IDM08G120C5XTMA1
- Manufacturer:
- Infineon
Subtotal (1 reel of 2500 units)*
€2,830.00
(exc. VAT)
€3,480.00
(inc. VAT)
Temporarily out of stock
- Shipping from 08 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | €1.132 | €2,830.00 |
*price indicative
- RS Stock No.:
- 222-4830
- Mfr. Part No.:
- IDM08G120C5XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.85V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1) | |
| Length | 6.65mm | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.85V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1) | ||
Length 6.65mm | ||
Height 10.4mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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