Infineon 650 V 10 A Rectifier & Schottky Diode 3-Pin TO-247 IDW10G65C5XKSA1
- RS Stock No.:
- 249-6935
- Mfr. Part No.:
- IDW10G65C5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
€4.02
(exc. VAT)
€4.94
(inc. VAT)
Temporarily out of stock
- 242 left, ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | €4.02 |
| 10 - 24 | €3.82 |
| 25 - 49 | €3.66 |
| 50 - 99 | €3.50 |
| 100 + | €3.25 |
*price indicative
- RS Stock No.:
- 249-6935
- Mfr. Part No.:
- IDW10G65C5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDW20G65 | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 58A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDW20G65 | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 58A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1 for target applications
Optimized for high temperature operation
Related links
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