STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 151-939
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
€1,283.00
(exc. VAT)
€1,578.00
(inc. VAT)
Temporarily out of stock
- Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | €1.283 | €1,283.00 |
*price indicative
- RS Stock No.:
- 151-939
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 14A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 16mm | |
| Width | 4.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 14A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 16mm | ||
Width 4.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
Related links
- STMicroelectronics STGB3NC120HDT4 IGBT 3-Pin D²PAK, Surface Mount
- ON Semiconductor 700mA D-PAK MC78M05CDTG
- Infineon IPS2041RPBF Power Switch IC 3-Pin, D-PAK
- Vishay 40V 5.5A 3-Pin D-PAK 50WQ04FN
- Infineon IPS6021RPBFHigh Side D-PAK
- Vishay Switching Diode, 3 + Tab-Pin D-PAK (TO-252AA) VS-8EWS12S-M3
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2280KEHRC11
- ROHM SiC N-Channel MOSFET 1200 V, 3-Pin TO-247N SCT2280KEGC11
