onsemi HGT1S10N120BNST, N-Channel IGBT, 35 A 1.2 kV, 3-Pin TO-263, Surface
- RS Stock No.:
- 807-6660
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
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€10.42
(exc. VAT)
€12.82
(inc. VAT)
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- Plus 34 left, shipping from 09 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | €5.21 | €10.42 | - |
| 20 - 198 | €4.49 | €8.98 | 13% |
| 200 + | €3.895 | €7.79 | 25% |
*price indicative
- RS Stock No.:
- 807-6660
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 35A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 298W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.45V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | NPT | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 35A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 298W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.45V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series NPT | ||
Automotive Standard No | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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