STMicroelectronics STGB3NC120HDT4, N-Channel IGBT, 14 A 1.2 kV, 3-Pin TO-263, Surface
- RS Stock No.:
- 151-940
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
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Units | Per unit | Per Tape* | Saving |
|---|---|---|---|
| 5 - 45 | €2.184 | €10.92 | - |
| 50 - 245 | €1.922 | €9.61 | €13.10 |
| 250 - 495 | €1.716 | €8.58 | €117.00 |
| 500 + | €1.474 | €7.37 | €355.00 |
*price indicative
- RS Stock No.:
- 151-940
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 14A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 16mm | |
| Width | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 14A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 16mm | ||
Width 4.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
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