onsemi, Type N-Channel IGBT-Field Stop II, 70 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

€107.52

(exc. VAT)

€132.24

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90€3.584€107.52
120 - 240€2.857€85.71
270 - 480€2.706€81.18
510 - 990€2.56€76.80
1020 +€2.264€67.92

*price indicative

RS Stock No.:
163-0258
Mfr. Part No.:
NGTB35N65FL2WG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT-Field Stop II

Maximum Continuous Collector Current Ic

70A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

300W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Width

16.25 mm

Height

5.3mm

Series

Field Stop

Length

20.8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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