Infineon IKP39N65ES5XKSA1, N-Channel IGBT, 62 A 650 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 226-6105
- Mfr. Part No.:
- IKP39N65ES5XKSA1
- Manufacturer:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 226-6105
- Mfr. Part No.:
- IKP39N65ES5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 62A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | IKP39N65ES5 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 62A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series IKP39N65ES5 | ||
Automotive Standard No | ||
The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.
Very low VCEsat of 1.45 V at 25°C
4 times Ic pulse current (100°C Tc)
Maximum junction temperature Tvj 175°C
Related links
- Infineon 62 A 650 V Through Hole
- Infineon 62 A 650 V Through Hole
- IXYS IXYN100N120C3H1 62 A 1200 V Surface
- IXYS 62 A 1200 V Surface
- IXYS X2-Class N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- onsemi SiC Power N-Channel MOSFET 650 V N, 7-Pin TO-263 NTBG045N065SC1
- onsemi SUPERFET III N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- Infineon IKQ120N65EH7XKSA1 3-Pin PG-TO-247-3-PLUS-N, Through Hole