MPN

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

RS Stock No.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Manufacturer:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Subtotal (1 tray of 10 units)*

€1,729.03

(exc. VAT)

€2,126.71

(inc. VAT)

Temporarily out of stock

Shipping from 15 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 +	€172.903	€1,729.03

*price indicative

RS Stock No.:: 244-5379
Mfr. Part No.:: FP100R12KT4BOSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	+/-20V
	Number of Transistors	7
	Maximum Power Dissipation	515 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage +/-20V
	Number of Transistors 7
	Maximum Power Dissipation 515 W

Datasheet - FP100R12KT4BOSA1

The infineon IGBT module the maximum rated repetitive peak collector current is 200 A and collector-emitter saturation voltag 2.20 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.27 nF

Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V

Related links