Infineon FP25R12W2T4BOMA1 IGBT Module 1200 V
- RS Stock No.:
- 244-5394
- Mfr. Part No.:
- FP25R12W2T4BOMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 unit)*
€47.65
(exc. VAT)
€58.61
(inc. VAT)
In Stock
- Plus 12 unit(s) shipping from 28 September 2026
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Units | Per unit |
|---|---|
| 1 - 1 | €47.65 |
| 2 - 4 | €46.69 |
| 5 + | €42.02 |
*price indicative
- RS Stock No.:
- 244-5394
- Mfr. Part No.:
- FP25R12W2T4BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 175W | |
| Number of Transistors | 7 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 51mm | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Width | 42.5mm | |
| Series | FP25R12W2T4B | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 175W | ||
Number of Transistors 7 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Length 51mm | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Width 42.5mm | ||
Series FP25R12W2T4B | ||
Automotive Standard No | ||
Infineon FP25R12W2T4B Series IGBT Module, 1200V Collector-Emitter Voltage, 175W Power Dissipation - FP25R12W2T4BOMA1
This IGBT module is a power semiconductor device designed to switch and control high-voltage DC and AC loads in industrial applications. It combines multiple switching elements into a single Compact package to manage significant power dissipation while operating across a wide ambient temperature range.
Features and Benefits:
• 1200V collector-emitter rating for high-voltage switching capability
• 175W maximum power dissipation to handle elevated thermal loads
• Vce(sat) 2.25V for reduced conduction losses during on-state
• Gate-emitter withstand of 20V to protect control inputs
• Seven-transistor configuration to support complex switching arrangements
• Operable from -40 to 150°C for wide thermal headroom
• 175W maximum power dissipation to handle elevated thermal loads
• Vce(sat) 2.25V for reduced conduction losses during on-state
• Gate-emitter withstand of 20V to protect control inputs
• Seven-transistor configuration to support complex switching arrangements
• Operable from -40 to 150°C for wide thermal headroom
Applications
• Suitable for traction inverter stages in power conversion systems
• Ideal for industrial motor controllers requiring high-voltage devices
• Used with medium-voltage UPS and power backup systems
• Can be used for welding power supplies needing robust switches
• Used for renewable energy inverters handling elevated DC voltages
• Ideal for industrial motor controllers requiring high-voltage devices
• Used with medium-voltage UPS and power backup systems
• Can be used for welding power supplies needing robust switches
• Used for renewable energy inverters handling elevated DC voltages
What maximum junction temperature can the device tolerate?
The maximum operating temperature specified is 150°C.
How many switching elements are integrated in the package?
The module contains seven transistors integrated into a single unit.
What certification or environmental standard is noted for material compliance?
The unit meets RoHS requirements indicating restricted hazardous substances compliance.
What physical footprint should be allowed for PCB or heatsink layout?
The module measures 42.5 mm in width, 51 mm in length and 12 mm in height.
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