Infineon FP50R06W2E3BOMA1 IGBT Module 600 V

This IGBT module is a Compact power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power systems. It provides robust switching capability for converters, inverters and motor drives while operating across a wide thermal range in demanding environments. The device is RoHS-compliant and intended for applications that require multiple transistor outputs within a single package.

• 600 V collector-emitter rating enables high-voltage switching capability
• 175 W maximum power dissipation supports substantial continuous load handling
• 1.9 V maximum VCE(sat) reduces conduction losses during on-state operation
• Gate-emitter tolerance of 20 V permits standard gate-drive voltages
• Seven transistors in one package allow multi-channel switching arrangements

• Suitable for three-phase motor inverter stages requiring multiple switches
• Ideal for industrial DC-DC converters with high-voltage inputs
• Used with power rectifiers in medium-power traction systems
• Can be used for renewable-energy inverters handling variable loads
• Suitable for laboratory or test rigs needing clustered transistor outputs

It is rated to operate down to −40 °C and up to 150 °C.

The unit measures 42.5 x 51 x 12 mm for Compact mounting and footprint planning.

Multiple transistors in one housing reduce interconnection length and simplify gate routing for multi-leg topologies.

The device is not specified to automotive standards and should not be relied upon for automotive-qualified designs.