IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 791-7416
- Mfr. Part No.:
- IXGH48N60B3
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 pack of 2 units)*
€17.43
(exc. VAT)
€21.438
(inc. VAT)
In Stock
- 20 unit(s) ready to ship from another location
- Plus 2 unit(s) shipping from 13 January 2026
- Plus 30 unit(s) shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | €8.715 | €17.43 |
| 10 - 28 | €7.03 | €14.06 |
| 30 - 58 | €6.27 | €12.54 |
| 60 - 118 | €5.755 | €11.51 |
| 120 + | €5.225 | €10.45 |
*price indicative
- RS Stock No.:
- 791-7416
- Mfr. Part No.:
- IXGH48N60B3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 280 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 300 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 280 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 300 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- IXYS IXGH48N60B3 IGBT 3-Pin TO-247, Through Hole
- Infineon IRGPS46160DPBF IGBT 3-Pin Super-247, Through Hole
- Infineon IKW50N60TFKSA1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXXK100N60C3H1 IGBT 3-Pin TO-264, Through Hole
- Infineon IGW50N60TFKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi FGH40N60SMD IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB50N60FLWG IGBT 3-Pin TO-247, Through Hole
- Infineon IKW40N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
