Dual P-Channel MOSFET, 83 A, 650 V Depletion, 9-Pin ACEPACK SMIT STMicroelectronics STGSH80HB65DAG

The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.

AQG 324 qualified
High-speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance thanks to DBC substrate