Infineon Type N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1
- RS Stock No.:
- 349-316
- Mfr. Part No.:
- FF3MR12KM1HPHPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
€473.47
(exc. VAT)
€582.37
(inc. VAT)
In Stock
- 8 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | €473.47 |
*price indicative
- RS Stock No.:
- 349-316
- Mfr. Part No.:
- FF3MR12KM1HPHPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.59V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, 60068, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.59V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, 60068, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is designed in the well-known 62 mm housing, integrating M1H chip technology for high performance power applications. This module offers high current density, making it ideal for space-constrained systems that require robust performance. With low switching losses, it ensures greater efficiency at high switching frequencies. The superior gate oxide reliability enhances durability, extending the module’s operational life in demanding conditions.
Minimizes cooling efforts
Reduction in volume and size
Reduced system costs
Symmetrical module design
Standard construction technique