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Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

RS Stock No.:: 351-874
Mfr. Part No.:: IGLR65R270D2XUMA1
Manufacturer:: Infineon

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

€9.20

(exc. VAT)

€11.30

(inc. VAT)

In Stock

5,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	€1.84	€9.20
50 - 95	€1.748	€8.74
100 - 495	€1.62	€8.10
500 - 995	€1.49	€7.45
1000 +	€1.432	€7.16

*price indicative

RS Stock No.:: 351-874
Mfr. Part No.:: IGLR65R270D2XUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TSON-8
	Series	IGLR65
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.33Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	10 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	28W
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TSON-8
	Series IGLR65
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.33Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 10 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 28W
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGLR65R270D2XUMA1

COO (Country of Origin):: MY

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge and low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

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