Vishay SiR N channel-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP

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Subtotal (1 unit)*

€2.66

(exc. VAT)

€3.27

(inc. VAT)

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Units
Per unit
1 - 9€2.66
10 - 24€1.74
25 - 99€0.95
100 - 499€0.94
500 +€0.92

*price indicative

RS Stock No.:
735-140
Mfr. Part No.:
SiR626DP
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0017Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

60V

Maximum Operating Temperature

150°C

Width

6mm

Height

2mm

Standards/Approvals

RoHS

Length

7mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

52nC typical total gate charge for fast switching

Low RDS(on) x Qg figure-of-merit

15°C/W maximum junction-to-ambient thermal resistance

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