Vishay SiR N channel-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SiR638ADP

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

€2.00

(exc. VAT)

€2.46

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9€2.00
10 - 24€1.30
25 - 99€0.72
100 - 499€0.71
500 +€0.70

*price indicative

RS Stock No.:
735-146
Mfr. Part No.:
SiR638ADP
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

40V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

2mm

Width

6mm

Length

7mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 40V drain-source voltage, optimized for high power density DC/DC converters in AI server applications. It delivers ultra-low on-resistance of 0.88mΩ maximum at 10V gate drive for superior conduction efficiency in synchronous rectification circuits.

147S forward trans conductance

110nC total gate charge at 10V VGS

Qgd/Qgs ratio less than 1 for optimized switching

Related links