Vishay SiR N channel-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR510DP

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€2.38

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€2.93

(inc. VAT)

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Per unit
1 - 9€2.38
10 - 24€1.55
25 - 99€0.85
100 - 499€0.84
500 +€0.83

*price indicative

RS Stock No.:
735-164
Mfr. Part No.:
SiR510DP
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

100V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Length

7mm

Height

2mm

Width

6mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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