Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

€1,284.00

(exc. VAT)

€1,578.00

(inc. VAT)

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3000 +€0.428€1,284.00

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RS Stock No.:
268-8334
Mfr. Part No.:
SIR5710DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26.8A

Maximum Drain Source Voltage Vds

150V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0315Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

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