Vishay SiH N channel-Channel MOSFET, 48 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHK045N60E

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€10.55

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€12.98

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1 - 9€10.55
10 - 49€6.54
50 - 99€5.06
100 +€3.73

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RS Stock No.:
735-154
Mfr. Part No.:
SiHK045N60E
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

650V

Series

SiH

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance Rds

0.043Ω

Channel Mode

Enhancement

Forward Voltage Vf

600V

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Width

10mm

Standards/Approvals

RoHS

Height

2mm

Length

13mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range