Vishay SiH N channel-Channel MOSFET, 47 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK045N60EF

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€10.55

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€12.98

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Per unit
1 - 9€10.55
10 - 49€6.54
50 - 99€5.06
100 +€3.73

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RS Stock No.:
735-157
Mfr. Part No.:
SiHK045N60EF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

600V

Series

SiH

Package Type

PowerPAK 10 x 12

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.045Ω

Channel Mode

Enhancement

Forward Voltage Vf

600V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Length

13mm

Height

2mm

Width

10mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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