Vishay SiR N channel-Channel MOSFET, 241 A, 100 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5100DP

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

€3.52

(exc. VAT)

€4.33

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 11 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9€3.52
10 - 49€2.18
50 - 99€1.68
100 +€1.25

*price indicative

RS Stock No.:
735-162
Mfr. Part No.:
SiRS5100DP
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

241A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8S

Series

SiR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0025Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

100V

Maximum Operating Temperature

150°C

Height

2mm

Width

5mm

Standards/Approvals

RoHS

Length

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

Related links