Vishay SiR N channel-Channel MOSFET, 518 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4302DP

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Subtotal (1 unit)*

€2.87

(exc. VAT)

€3.53

(inc. VAT)

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Per unit
1 - 9€2.87
10 - 24€1.86
25 - 99€1.02
100 - 499€1.01
500 +€1.00

*price indicative

RS Stock No.:
735-148
Mfr. Part No.:
SiRS4302DP
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

518A

Maximum Drain Source Voltage Vds

30V

Series

SiR

Package Type

PowerPAK SO-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00057Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

153nC

Forward Voltage Vf

30V

Maximum Power Dissipation Pd

245W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

5mm

Length

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

87A continuous drain current at TA=25°C

Low RDS(on) x Qg figure-of-merit for superior switching performance

100% Rg and UIS tested construction

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