Vishay SiR N channel-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP

Image representative of range

Bulk discount available

Subtotal (1 unit)*

€2.00

(exc. VAT)

€2.46

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 21 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9€2.00
10 - 24€1.30
25 - 99€0.72
100 - 499€0.71
500 +€0.70

*price indicative

RS Stock No.:
735-135
Mfr. Part No.:
SiR580DP
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0027Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

50.6nC

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

80V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

7mm

Width

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel power MOSFET rated for 80V drain-source voltage, Ideal for high-efficiency switching in AI power server and DC/DC converter applications. It delivers ultra-low on-resistance of 2.7mΩ maximum at 10V gate drive to minimize conduction losses under heavy loads.

146A continuous drain current at TC=25°C

76nC maximum total gate charge

-55°C to +150°C operating junction temperature