Infineon StrongIRFET N channel-Channel Power MOSFET, 125 A, 30 V Enhancement, 3-Pin PG-TO263-3 IPB018N03LF2SATMA1

Image representative of range

Bulk discount available

Subtotal (1 unit)*

€1.73

(exc. VAT)

€2.13

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9€1.73
10 - 24€1.45
25 - 99€0.90
100 - 499€0.88
500 +€0.85

*price indicative

RS Stock No.:
762-987
Mfr. Part No.:
IPB018N03LF2SATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Series

StrongIRFET

Package Type

PG-TO263-3

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

167W

Typical Gate Charge Qg @ Vgs

46nC

Maximum Operating Temperature

175°C

Length

15.88mm

Height

4.83mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 Power Transistor is a 30V N-channel MOSFET suitable for various applications. It operates in extreme conditions, with a maximum temperature rating of 175°C and conforms to environmental regulations.

100% avalanche tested

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Related links