Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1
- RS Stock No.:
- 110-7754
- Distrelec Article No.:
- 304-36-977
- Mfr. Part No.:
- BSP372NH6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 50 units)*
€29.00
(exc. VAT)
€35.50
(inc. VAT)
Temporarily out of stock
- 950 unit(s) shipping from 26 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | €0.58 | €29.00 |
| 100 - 200 | €0.469 | €23.45 |
| 250 - 450 | €0.44 | €22.00 |
| 500 - 1200 | €0.412 | €20.60 |
| 1250 + | €0.377 | €18.85 |
*price indicative
- RS Stock No.:
- 110-7754
- Distrelec Article No.:
- 304-36-977
- Mfr. Part No.:
- BSP372NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5 mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 3.5 mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP295H6327XTSA1
- STMicroelectronics SuperMESH3 Type N-Channel MOSFET 400 V Enhancement, 4-Pin SOT-223 STN3N40K3
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1