Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	75 V
	Series	OptiMOS™
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.36mm
	Typical Gate Charge @ Vgs	183 nC @ 10 V
	Transistor Material	Si
	Width	4.57mm
	Minimum Operating Temperature	-55 °C
	Height	15.95mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 75 V
	Series OptiMOS™
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.36mm
	Typical Gate Charge @ Vgs 183 nC @ 10 V
	Transistor Material Si
	Width 4.57mm
	Minimum Operating Temperature -55 °C
	Height 15.95mm

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1

Infineon OptiMOS™ Power MOSFET Family

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