International Rectifier IRLML2502 N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF
- RS Stock No.:
- 162-3274
- Mfr. Part No.:
- IRLML2502TRPBF
- Manufacturer:
- International Rectifier
Bulk discount available
Subtotal (1 reel of 3000 units)*
€297.00
(exc. VAT)
€366.00
(inc. VAT)
In Stock
- 75,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | €0.099 | €297.00 |
| 6000 - 6000 | €0.094 | €282.00 |
| 9000 + | €0.088 | €264.00 |
*price indicative
- RS Stock No.:
- 162-3274
- Mfr. Part No.:
- IRLML2502TRPBF
- Manufacturer:
- International Rectifier
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | International Rectifier | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | IRLML2502 | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 8 nC @ 5 V | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand International Rectifier | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Series IRLML2502 | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 8 nC @ 5 V | ||
Width 1.4mm | ||
Height 1.02mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
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