Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

View all MOSFETs

Subtotal (1 reel of 4000 units)*

€1,528.00

(exc. VAT)

€1,880.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
4000 +€0.382€1,528.00

*price indicative

RS Stock No.:
165-5939
Mfr. Part No.:
IRF7316TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

98mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.78V

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links