Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	21 A
	Maximum Drain Source Voltage	200 V
	Package Type	D2PAK (TO-263)
	Series	QFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	140 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	3.13 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	9.65mm
	Maximum Operating Temperature	+150 °C
	Length	10.67mm
	Typical Gate Charge @ Vgs	27 nC @ 5 V
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 21 A
	Maximum Drain Source Voltage 200 V
	Package Type D2PAK (TO-263)
	Series QFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 140 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 3.13 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 9.65mm
	Maximum Operating Temperature +150 °C
	Length 10.67mm
	Typical Gate Charge @ Vgs 27 nC @ 5 V
	Minimum Operating Temperature -55 °C
	Height 4.83mm

onsemi QFET N-Channel MOSFET, 21 A, 200 V, 3-Pin D2PAK FQB19N20LTM

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor

Related links