N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK Infineon IRFU024NPBF

RS Stock No.:: 168-6296
Mfr. Part No.:: IRFU024NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK Infineon IRFU024NPBF

Bulk discount available

Subtotal (1 tube of 75 units)**

€29.03

(exc. VAT)

€35.70

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
75 - 75	€0.387	€29.025
150 - 300	€0.302	€22.65
375 - 675	€0.283	€21.225
750 - 1425	€0.276	€20.70
1500 +	€0.269	€20.175

**price indicative

RS Stock No.:: 168-6296
Mfr. Part No.:: IRFU024NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRFU024NPBF

This high-performance N-channel MOSFET is suitable for various electrical applications. With specifications including a maximum continuous drain current of 17A and a maximum drain-source voltage of 55V, this component is important for professionals in the automation and electronics fields. Its capability to operate in high-temperature environments contributes to its reliability for demanding projects.

Features & Benefits

• Maximum power dissipation of up to 45W for robust operation
• Low drain-source resistance of 75mΩ enhances energy efficiency
• Maximum gate threshold of 4V for improved performance
• Single transistor configuration simplifies design integration
• Designed for through-hole mounting in a TO-251 package for easy installation

Applications

• Used in power management systems for enhanced efficiency
• Ideal for high-frequency switching
• Suitable for automotive electronics ensuring consistent performance
• Employed in industrial automation for control systems
• Appropriate for telecommunications to maintain signal integrity

What is the maximum continuous drain current supported?

The maximum continuous drain current supported is 17A, making it suitable for various applications requiring significant power handling.

How does temperature affect performance?

The component operates effectively within a wide temperature range from -55°C to +175°C, ensuring stability under extreme conditions.

Can it handle varying gate-source voltages?

Yes, it can accommodate gate-source voltages from -20 V to +20 V, providing flexibility in circuit design.

What are the implications of low drain-source resistance?

A low drain-source resistance of 75mΩ leads to reduced heat generation and improved efficiency, which is crucial for high-performance applications.

Is it suitable for enhancement mode applications?

Yes, this transistor is designed as an enhancement mode device, allowing versatility in different circuit configurations.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	20 nC @ 10 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Width	2.39mm
Transistor Material	Si
Height	6.22mm
Minimum Operating Temperature	-55 °C