Infineon IPD600N25N3 G Type N-Channel MOSFET, 25 A, 250 V Enhancement, 5-Pin TO-252

RS Stock No.:: 170-2288
Mfr. Part No.:: IPD600N25N3GATMA1
Manufacturer:: Infineon

Infineon IPD600N25N3 G Type N-Channel MOSFET, 25 A, 250 V Enhancement, 5-Pin TO-252

Subtotal (1 reel of 2500 units)*

€2,797.50

(exc. VAT)

€3,440.00

(inc. VAT)

In Stock

7,500 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	€1.119	€2,797.50

*price indicative

RS Stock No.:: 170-2288
Mfr. Part No.:: IPD600N25N3GATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-252
	Series	IPD600N25N3 G
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-252
	Series IPD600N25N3 G
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

Infineon IPD600N25N3 G Series MOSFET, 250V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - IPD600N25N3GATMA1

This MOSFET is a high-voltage N-channel transistor designed for power switching and conversion tasks in compact surface-mounted assemblies. It operates across a wide temperature range and is intended for applications requiring robust drain-source voltage handling and moderate continuous current capability while maintaining efficient switching behaviour.

Features and Benefits:

• 250V drain-source rating enables high-voltage switching applications
• 60 mΩ RDS(on) reduces conduction losses for improved efficiency
• 25A continuous drain current supports sustained load operation
• 22 nC typical gate charge allows effective switching control
• 0.9V forward voltage minimises diode conduction losses
• 136W maximum power dissipation permits high-power handling

Applications

• Suitable for DC-DC converter power stages
• Ideal for motor-drive inverter switches
• Used with switch-mode power supplies for primary switching
• Can be used for battery-management and power distribution
• Suitable for high-voltage relay and solenoid drivers

What thermal environment can it tolerate during operation?

It is rated to function from -55 °C up to 175 °C, allowing use in both cold-start and elevated-temperature installations.

How is it intended to be mounted on assemblies?

The device is provided in a TO-252 package configured for surface-mount installation to ease integration on compact boards.

What gate-drive limitations should be observed?

Gate-source voltage must not exceed 20V to prevent gate overstress, so gate drivers should be chosen accordingly.

How many electrical connections are available for circuit layout?

The component presents five pins, offering multiple connection points for drain, source, gate and mounting considerations.