Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN onsemi NVMFD5C672NLT1G

RS Stock No.:: 172-3355
Mfr. Part No.:: NVMFD5C672NLT1G
Manufacturer:: onsemi

Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN onsemi NVMFD5C672NLT1G

Temporarily out of stock - back order for despatch when stock is available

Added

Price Each (In a Pack of 25)

€1.74

(exc. VAT)

€2.14

(inc. VAT)

Units	Per unit	Per Pack*
25 - 75	€1.74	€43.50
100 - 225	€1.305	€32.625
250 - 475	€1.265	€31.625
500 - 975	€1.157	€28.925
1000 +	€1.129	€28.225
*price indicative

RS Stock No.:: 172-3355
Mfr. Part No.:: NVMFD5C672NLT1G
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	49 A
Maximum Drain Source Voltage	60 V
Series	NVMFD5C672NL
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	16.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	45 W
Maximum Gate Source Voltage	±20 V
Width	5.1mm
Length	6.1mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	12.3 nC @ 10 V
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V
Height	1.05mm
Minimum Operating Temperature	-55 °C

RS Stock No.:: 172-3355
Mfr. Part No.:: NVMFD5C672NLT1G
Manufacturer:: onsemi