Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	313W
	Typical Gate Charge Qg @ Vgs	81nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	20.82mm
	Length	15.87mm
	Standards/Approvals	No
	Width	4.82 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 313W
	Typical Gate Charge Qg @ Vgs 81nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 20.82mm
	Length 15.87mm
	Standards/Approvals No
	Width 4.82 mm
	Automotive Standard No

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 81 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 70 mΩ

Applications

Telecommunication

Cloud system

Industrial

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTH Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247

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