onsemi NTMFS6H801N N-Channel MOSFET, 157 A, 80 V Enhancement, 5-Pin DFN NTMFS6H801NT1G
- RS Stock No.:
- 172-8986
- Mfr. Part No.:
- NTMFS6H801NT1G
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
€14.42
(exc. VAT)
€17.74
(inc. VAT)
In Stock
- Plus 1,275 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | €2.884 | €14.42 |
| 50 - 95 | €2.486 | €12.43 |
| 100 - 495 | €2.158 | €10.79 |
| 500 - 995 | €1.894 | €9.47 |
| 1000 + | €1.724 | €8.62 |
*price indicative
- RS Stock No.:
- 172-8986
- Mfr. Part No.:
- NTMFS6H801NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NTMFS6H801N | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 800mV | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NTMFS6H801N | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 800mV | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
Commercial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
Motor Control
Load Switch
DC/DC converter
Synchronous Rectifier
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