N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NVMFS6H801NT1G

The ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.8mohm at a gate-source voltage of 10V. It has a maximum continuous drain current of 157A and a maximum power dissipation of 166W. The driving voltage for this MOSFET is 10V. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Automotive power MOSFET
• Compact and efficient design
• High thermal performance
• Lead (Pb) free
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction Losses
• Minimises driver losses
• Operating temperature ranges between -55°C and 175°C
• Wettable flank option available for enhanced optical inspection

• DC-DC converter
• Load switch
• Motor control
• Power switches (high side driver, low side driver, H bridges etc)
• Switching power supplies

• AEC−Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007