N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB Infineon IRF1010EPBF

RS Stock No.:: 178-1449
Mfr. Part No.:: IRF1010EPBF
Manufacturer:: Infineon

N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB Infineon IRF1010EPBF

Bulk discount available

Subtotal (1 tube of 50 units)**

€39.50

(exc. VAT)

€48.50

(inc. VAT)

Temporarily out of stock - back order for despatch 13-06-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 - 50	€0.79	€39.50
100 - 200	€0.648	€32.40
250 - 450	€0.608	€30.40
500 - 1200	€0.569	€28.45
1250 +	€0.529	€26.45

**price indicative

RS Stock No.:: 178-1449
Mfr. Part No.:: IRF1010EPBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF

This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.

Features & Benefits

• Low RDS(on) contributes to minimal power loss at high currents
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection

Applications

• Power supply circuits for efficient voltage regulation
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices

What are the thermal resistance values for this product?

The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.

Can it operate safely in environments with high temperatures?

Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.

What type of current can it handle at high temperatures?

At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.

How does the gate charge affect its performance?

With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.

What is the maximum gate-to-source voltage supported?

The device supports a maximum gate-to-source voltage of ±20V, providing flexibility in driving circuits and ensuring safe operation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	60 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	12 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4.69mm
Transistor Material	Si
Length	10.54mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	130 nC @ 10 V
Height	8.77mm
Minimum Operating Temperature	-55 °C