onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTPF082N65S3F

RS Stock No.:: 178-4602
Mfr. Part No.:: NTPF082N65S3F
Manufacturer:: onsemi

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTPF082N65S3F

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Subtotal (1 unit)*

€4.20

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€5.17

(inc. VAT)

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Final 298 unit(s), ready to ship from another location

Units	Per unit
1 - 9	€4.20
10 +	€3.62

*price indicative

RS Stock No.:: 178-4602
Mfr. Part No.:: NTPF082N65S3F
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	48W
	Typical Gate Charge Qg @ Vgs	70nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	10.63mm
	Height	16.12mm
	Standards/Approvals	No
	Width	4.9 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 48W
	Typical Gate Charge Qg @ Vgs 70nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 10.63mm
	Height 16.12mm
	Standards/Approvals No
	Width 4.9 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ T_J = 150 oC

Ultra Low Gate Charge (Typ. Qg = 70 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)

Optimized Capacitance

Excellent body diode performance (low Qrr, robust body diode)

Typ. RDS(on) = 70 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge Circuit

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

Solar / UPS

EV charger

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTPF082N65S3F

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