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onsemi NTP067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP067N65S3H

RS Stock No.:: 221-6742
Mfr. Part No.:: NTP067N65S3H
Manufacturer:: onsemi

onsemi NTP067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP067N65S3H

Bulk discount available

Subtotal (1 pack of 2 units)*

€10.08

(exc. VAT)

€12.40

(inc. VAT)

Supply shortage

Plus 486 left, shipping from 05 January 2026

Our current stock is limited and our suppliers are expecting shortages.

Units	Per unit	Per Pack*
2 - 18	€5.04	€10.08
20 - 198	€4.345	€8.69
200 +	€3.77	€7.54

*price indicative

RS Stock No.:: 221-6742
Mfr. Part No.:: NTP067N65S3H
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Series	NTP067N
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	266W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	16.3mm
	Width	4.7 mm
	Length	10.67mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Series NTP067N
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 266W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 16.3mm
	Width 4.7 mm
	Length 10.67mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NTP067N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 691 pF

100% avalanche tested

onsemi NTP067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP067N65S3H

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