Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 178-7497
- Mfr. Part No.:
- BSZ042N06NSATMA1
- Manufacturer:
- Infineon
Subtotal (1 reel of 5000 units)*
€2,495.00
(exc. VAT)
€3,070.00
(inc. VAT)
Temporarily out of stock
- Shipping from 01 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | €0.499 | €2,495.00 |
*price indicative
- RS Stock No.:
- 178-7497
- Mfr. Part No.:
- BSZ042N06NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS 5 Series MOSFET, 60V Drain Source Voltage, 40A Continuous Drain Current - BSZ042N06NSATMA1
This MOSFET is a silicon N-channel enhancement device intended for high-power switching in surface-mount applications. It operates across a wide temperature span and is designed to handle substantial currents and voltages typical of power conversion and switching stages. The component is supplied in a low-profile TDSON package suitable for compact assemblies where thermal and electrical performance are required.
Features and Benefits:
• 60V drain rating enables robust mid-voltage switching
• 40A continuous current capability supports high-load circuits
• 6.3 mΩ low Rds(on) reduces conduction losses
• 27 nC typical gate charge allows faster gate transitions
• 69W power dissipation permits sustained power handling
• 40A continuous current capability supports high-load circuits
• 6.3 mΩ low Rds(on) reduces conduction losses
• 27 nC typical gate charge allows faster gate transitions
• 69W power dissipation permits sustained power handling
Applications
• Suitable for synchronous buck converter stages
• Ideal for motor driver half-bridge assemblies
• Used with DC-DC power modules in server supplies
• Can be used for battery management and charging circuits
• Ideal for motor driver half-bridge assemblies
• Used with DC-DC power modules in server supplies
• Can be used for battery management and charging circuits
What gate-drive considerations should I account for?
The typical gate charge of 27 nC at the specified gate voltage necessitates a driver capable of sourcing and sinking sufficient peak current to achieve the required switching speed without excessive transition losses.
How does the package affect thermal performance?
The TDSON 8-pin layout provides a low thermal-resistance path to the PCB, enabling effective heat transfer when used with appropriate copper area and thermal vias for elevated power dissipation.
What temperature range can it tolerate during operation?
It is rated to function across a wide operating-temperature window from deep cold to high-temperature environments, accommodating designs exposed to extreme conditions.
How is switching behaviour impacted by device characteristics?
The combination of low on-resistance and moderate gate charge balances low conduction losses with controllable switching transitions, making it suitable for efficiency-focused power stages.
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON BSZ042N06NSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON BSC016N06NSATMA1
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