Vishay SI8802DB Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1

RS Stock No.:: 180-7724
Mfr. Part No.:: SI8802DB-T2-E1
Manufacturer:: Vishay

Vishay SI8802DB Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1

Subtotal (1 pack of 25 units)*

€9.05

(exc. VAT)

€11.125

(inc. VAT)

In Stock

150 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 +	€0.362	€9.05

*price indicative

RS Stock No.:: 180-7724
Mfr. Part No.:: SI8802DB-T2-E1
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	8V
	Series	SI8802DB
	Package Type	MICRO FOOT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	54mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5V
	Typical Gate Charge Qg @ Vgs	4.3nC
	Maximum Power Dissipation Pd	0.6W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	0.8mm
	Length	0.8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 8V
	Series SI8802DB
	Package Type MICRO FOOT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 54mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5V
	Typical Gate Charge Qg @ Vgs 4.3nC
	Maximum Power Dissipation Pd 0.6W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 0.8mm
	Length 0.8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

Vishay SI8802DB Series MOSFET, 3.5A Maximum Continuous Drain Current, 8V Maximum Drain Source Voltage - SI8802DB-T2-E1

This n-channel enhancement MOSFET is designed for low-voltage switching and power-management tasks in compact surface-mount assemblies. It operates across a wide temperature range and is suited to designs requiring a small footprint and moderate continuous current capability. The device conforms to RoHS requirements and is supplied in a very compact micro package for high-density board layouts.

Features and Benefits:

• 54mΩ on-resistance reduces conduction losses and heat generation
• 8V drain-source rating enables low-voltage power stages
• 3.5A continuous drain current supports moderate load currents
• 4.3nC typical gate charge permits faster switching transitions
• 0.6W maximum power dissipation limits thermal stress under load
• -55°C to 150°C operating temperature range ensures wide thermal tolerance

Applications

• Suitable for battery-powered low-voltage DC power switching
• Ideal for compact power-management modules on small PCBs
• Used with motor-driver stages requiring fast switching
• Can be used for portable device power-rail switching
• Used for load switching in dense surface-mount assemblies

What pin count and mounting style does it use?

It is supplied as a four-pin device intended for surface-mount assembly in a micro-footprint package.

How does its thermal performance constrain PCB design?

With a 0.6W maximum dissipation and a small package, adequate copper area or thermal vias are recommended to spread heat and prevent localised temperature rise.

What gating considerations are advised for fast switching?

The typical gate charge of 4.3nC at the specified gate voltage necessitates driver stages capable of sourcing and sinking sufficient current to achieve the desired edge rates.

What voltage limits must be respected for safe operation?

The device must not exceed an 8V drain-source differential and a 5V gate-source amplitude to remain within specified electrical limits.